ENHANCED RELAXATION OF STRAINED GexSi1-x LAYERS INDUCED BY Co/GexSi1-x THERMAL REACTION
- 著者名:
- 掲載資料名:
- Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 320
- 発行年:
- 1994
- 開始ページ:
- 329
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992191 [1558992197]
- 言語:
- 英語
- 請求記号:
- M23500/320
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
7
国際会議録
EXPERIMENTAL AND THEORETICAL ANALYSIS OF STRAIN RELAXATION IN GeXSi1-X/Si(100) HETEROEPITAXY
Materials Research Society |
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
4
国際会議録
The Effect of Ion-Implantation-Induced Defects on Strain Relaxation in GexSi1-x/Si Heterostructures
MRS - Materials Research Society |
Materials Research Society |
5
国際会議録
X-RAY STUDY OF INTERDIFFUSION AND STRAIN RELAXATION IN ANNEALED (SiMGeN)P ATOMIC LAYER SUPERLATTICES
Materials Research Society |
MRS - Materials Research Society |
Kluwer Academic Publishers |
Materials Research Society |