Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2/Ta2O5, and Pure Ta2O5, in MOSFETs With 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics

Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2/Ta2O5, and Pure Ta2O5, in MOSFETs With 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics

著者名:

Shanware, A.

掲載資料名:

Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

567

発行年:

1999

開始ページ:

515

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994744 [1558994742]

言語:

英語

請求記号:

M23500/567

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020318
シリーズID:	PA00000011
会議名:	Symposium on ultrathin SiO2 and high-K materials for ulsi gate dielectrics
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

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