Modeling Soft Breakdown of Ultrathin Gate Oxide Layers

Modeling Soft Breakdown of Ultrathin Gate Oxide Layers

著者名:

掲載資料名:

Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

567

発行年:

1999

開始ページ:

307

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994744 [1558994742]

言語:

英語

請求記号:

M23500/567

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020318
シリーズID:	PA00000011
会議名:	Symposium on ultrathin SiO2 and high-K materials for ulsi gate dielectrics
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.05-1999.04.08

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2 国際会議録 Soft Breakdown in Ultrathin Oxides Weir, B. E., Silverman, P. J., Alers, G. B., Monroe, D., Alam, M. A., Sorsch, T. W., Green, M. L., Timp, G. L., Ma, Y., … MRS - Materials Research Society	8 国際会議録 SURFACE CHARACTERISATION OF Si AFTER HF TREATMENTS AND ITS INFLUENCE ON THE DIELECTRIC BREAKDOWN OF THERMAL OXIDES Verhaverbeke, S., Alay, J., Mertens, P., Meuris, M., Heyns, M., Vandervorst, W., Murrell, M., Sofield, C. Materials Research Society
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