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Interfacial Properties of Si-Si3N4 Formed by Remote Plasma Enhanced Chemical Vapor Deposition

著者名:
Misra, V.
Lazar, H.
Kulkarni, M.
Wang, Z.
Lucovsky, G.
Hauser, J. R.
さらに 1 件
掲載資料名:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
567
発行年:
1999
開始ページ:
89
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
言語:
英語
請求記号:
M23500/567
資料種別:
国際会議録

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