The Role of Cluster Size and Topology on the Ripening of Defect Aggregates in Crystalline Si
- 著者名:
- 掲載資料名:
- Multiscale modelling of materials : symposium held November 30-December 3, 1998, Boston, Massachusets, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 538
- 発行年:
- 1999
- 開始ページ:
- 241
- 出版情報:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994447 [1558994440]
- 言語:
- 英語
- 請求記号:
- M23500/538
- 資料種別:
- 国際会議録
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11
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ION BEAM INDUCED STRUCTURAL AND ELECTRICAL MODIFICATIONS IN CRYSTALLINE AND AMORPHOUS SILICON
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