Synchrotron X-ray Topographic Study of Dislocations in GaAs Detector Crystals Grown by Vertical Gradient Freeze Technique | 東京工業大学附属図書館文献データベース

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Synchrotron X-ray Topographic Study of Dislocations in GaAs Detector Crystals Grown by Vertical Gradient Freeze Technique

著者名:

Gagliardi, M-A.

Danilewsky, A. N.

さらに 7 件

掲載資料名:

Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

487

発行年:

1997

開始ページ:

459

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993921 [1558993924]

言語:

英語

請求記号:

M23500/487

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020311
シリーズID:	PA00000011
会議名:	Symposium on semiconductors for room-temperature radiation detector applications
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

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