Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes

Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes

著者名:

Castaldini, A.

掲載資料名:

Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

487

発行年:

1997

開始ページ:

447

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993921 [1558993924]

言語:

英語

請求記号:

M23500/487

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020311
シリーズID:	PA00000011
会議名:	Symposium on semiconductors for room-temperature radiation detector applications
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1997.12.01-1997.12.05

類似資料:

1 国際会議録 Defect Generation by Proton Irradiation of Semi-Insulating LEC GaAs Castaldini, A., Cavallini, A., Polenta, L., Canali, C., Nava, F., Puente, E. de la, Alvarez, A., Jimenez, J. MRS - Materials Research Society	7 国際会議録 Influence of Ohmic Contacts on Semi-Insulating GaAs Detector Performances Castaldini, A., Cavallini, A., Canali, C., Chiossi, C., Papa, C. del, Nava, F., Lanzieri, C. MRS - Materials Research Society
2 国際会議録 Dislocation-Related Deep States Induced by Irradiation in HVPE n-GaN Castaldini, A., Cavallini, A., Polenta, L. Materials Research Society	8 国際会議録 *Light-excitation-based spectroscopy of electronic defects in novel materials Castaldini, A., Cavallini, A., Polenta, L. MRS-Materials Research Society
3 国際会議録 DEFECTS INDUCED BY PROTONS AND ｦﾃ-RAYS IN SEMI-INSULATING GaAs DETECTORS Castaldini, A., Cavallini, A., Papa, C. del, Fuochi, G., Alietti, M., Canali, C., Nava, F., Paccagnella, A., Lanzieri, … MRS - Materials Research Society	9 国際会議録 Electron-Induced Damage Effects in 4H-SiC Schottky Diodes Castaldini, A., Cavallini, A., Nava, F., Fuochi, P.G., Vanni, P. Trans Tech Publications
4 国際会議録 Electronic Levels Induced by Irradiation in 4H-Silicon Carbide Castaldini, A., Cavallini, A., Rigutti, L., Nava, F. Trans Tech Publications	10 国際会議録 'Recovery' Effect of Electron Induced Damage in 4H-SiC Schottky Diodes Castaldini, A., Cavallini, A., Rigutti, L., Nava, F., Fuochi, P.G., Vanni, P. Materials Research Society
5 国際会議録 Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes Nava, F., Vanni, P., Verzellesi, G., Castaldini, A., Cavallini, A., Polenta, L., Nipoti, R., Donolato, C. Trans Tech Publications	11 国際会議録 Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance Detectors Bertuccio, G., Binetti, S., Caccia, S., Casiraghi, R., Castaldini, A., Cavallini, A., Lanzieri, C., Donne, A. Le, Nava, … Trans Tech Publications
6 国際会議録 Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 10^16 n/cm2 Anna Cavallini, Antonio Castaldini, Filippo Nava, Paolo Errani, Vladimir Cindro Materials Research Society	12 国際会議録 Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers Le Donne, A., Binetti, S., Acciarri, M., Castaldini, A., Nava, F., Cavallini, A., Pizzini, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12