Low pH Chemical Etch Route for Smooth H-Terminated Si(100) and Study of Subsequent Chemical Stability

Low pH Chemical Etch Route for Smooth H-Terminated Si(100) and Study of Subsequent Chemical Stability

著者名:

掲載資料名:

Science and technology of semiconductor surface preparation : symposium held April 1-3, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

477

発行年:

1997

開始ページ:

191

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993815 [1558993819]

言語:

英語

請求記号:

M23500/477

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020310
シリーズID:	PA00000011
会議名:	Symposium on science and technology of semiconductor surface preparation
回次:	1997
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.03

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