RAPID THERMAL ANNEALING OF LOW-ENERGY P AND B IMPLANTS IN SILICON, OPTIMIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

RAPID THERMAL ANNEALING OF LOW-ENERGY P AND B IMPLANTS IN SILICON, OPTIMIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

著者名:

掲載資料名:

Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

342

発行年:

1994

開始ページ:

363

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992429 [1558992421]

言語:

英語

請求記号:

M23500/342

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020298
シリーズID:	PA00000011
会議名:	Symposium on rapid thermal and integrated processing
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.04.04-1994.04.07

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