Blank Cover Image

HEATING RATE EFFECTS IN RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON

著者名:
掲載資料名:
Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
342
発行年:
1994
開始ページ:
351
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992429 [1558992421]
言語:
英語
請求記号:
M23500/342
資料種別:
国際会議録

類似資料:

1 国際会議録 *DEFECT STRUCTURES AND ELETRICAL BEHAVIOR OF RAPID THERMALLY ANNEALED ION IMPLANTED SILICON

Sadana, D. K.

Materials Research Society
7 国際会議録 SHALLOW DOPING OF GALLIUM ARSENIDE BY RECOIL IMPLANTATION

Sadana, D. K., de Souza, J. P., Rutz, R. F., Cardone, F., Norcott, M. H.

Materials Research Society
2 国際会議録 GERMANIUM IMPLANTATION INTO SILICON: AN ALTERNATE PRE-AMORPHIZATION/RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION TECHNOLOGY

Sadana, D. K., Myers, E., Liu, J., Finstaad, T., Rozgonyi, G. A.

North-Holland
8 国際会議録 DAMAGE AND IN-SITU ANNEALING DURING ION IMPLANTATION

Sadana, D. K., Washburn, J., Byrne, P. F., Cheung, N. W.

North-Holland
3 国際会議録 SHALLOW ION IMPLANTATION IN GALLIUM ARSENIDE MESFET TECHNOLOGY

de Souza, J. P., Sadana, D. K.

Materials Research Society
9 国際会議録 INFLUENCE OF RAPID THERMAL ANNEALING OF SHALLOW BF2 IMPLATATION INTO PRE-AMORPHIZED SILICON

Maszara, W., Carter, C., Sadana, D. K., Liu, J., Ozguz, V., Wortman, J., Rozgonyi, G. A.

North-Holland
4 国際会議録 Athermal Annealing of Silicon Implanted with Phosphorus and Arsenic

Grun, J., Fischer, R.P., Peckerar, M., Felix, C.L., Covington, B.C., Donnelly, D.W., Boro Djordjevic, B., Mignogna, R., …

Electrochemical Society
10 国際会議録 RAPID ANNEALING OF IMPLANT DAMAGE USING THERMAL RADIATION

Fulks, R. T., Russo, C. J., Downey, D. F., Hanley, P. R., Stacy, W. T.

North-Holland
5 国際会議録 METASTABLE ACTIVATION IN RAPID THERMAL ANNEALED ARSENIC IMPLANTED SILICON

Kamgar, A., Baiocchi, F.A.

Materials Research Society
11 国際会議録 Stress Enhanced Arsenic Diffusion in Titanium Salicided Junctions by Implantation into C49 TiSi2 and Rapid Thermal Annealing

Sohn, D. K., Park, J-S., Bae, J-U., Huh, Y-J., Park, J. W.

MRS - Materials Research Society
6 国際会議録 THE NATURE OF ELECTRICALLY INACTIVE IMPLANTED ARSENIC IN SILICON AFTER RAPID THERMAL ANNEALING

Altrip, John L., Evans, Alan G. R., Young, Nigel D., Logan, John R.

Materials Research Society
12 国際会議録 RECRYSTALLIZATION OF AMORPHOUS SILICON USING RAPID THERMAL PROCESSING LASER ANNEALING AND FURNACE HEATING

Viatella, J., Singh, R. K., Thakur, R. P. S., Sandhu, G., Harkness, S. D.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12