ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

ESR Studies of Defects in p-Type 6H-SiC Irradiated with 3MeV-Electrons

著者名:

Cha,D.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

615

終了ページ:

618

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 Characterization of Defects in Electron Irradiated 6H-SiC by Positron Lifetime and Electron Spin Resonance Kawasuso,A., Itoh,H., Cha,D., Okada,S. Trans Tech Publications	7 国際会議録 Generation Mechanisms of Trapped Charges in Oxide Layers of 6H-SiC MOS Structures Irradiated with Gamma-Rays Yoshikawa,M., Saitoh,K., Ohshima,T., Itoh,H., Nashiyama,I., Takahashi,Y., Ohnishi,K., Okumura,H., Yoshida,S. Trans Tech Publications
2 国際会議録 Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications	8 国際会議録 Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC Redmann, F., Kawasuso, A., Petters, K., Krause-Rehberg, R., Itoh, H. Trans Tech Publications
3 国際会議録 Defects Introduced by Electron-Irradiation at Low Temperatures in SiC N.T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh Trans Tech Publications	9 国際会議録 Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC Ohshima, T., Uedono, A., Eryu, O., Lee, K.K., Abe, K., Itoh, H., Nakashima, K. Trans Tech Publications
4 国際会議録 Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya Trans Tech Publications	10 国際会議録 Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study Kawasuso, A., Redmann, F., Krause-Rehberg, R., Sperr, P., Frank, T., Weidner, M., Pensl, G., Itoh, H. Trans Tech Publications
5 国際会議録 EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC Mizuochi, N., Isoya, J., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H. Trans Tech Publications	11 国際会議録 Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, … Trans Tech Publications
6 国際会議録 EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC Mizuochi, N., Isoya, J., Yamasaki, S., Takizawa, H., Morishita, N., Ohshima, T., Itoh, H. Trans Tech Publications	12 国際会議録 Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC Umeda, T., Son, N.T., Isoya, J., Morishita, N., Ohshima, T., Itoh, H., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12