Oxygen-Related Defect Centers in 4H Silicon Carbide
- 著者名:
Dalibor,T. Pensl,G. Yamamoto,T. Kimoto,T. Matsunami,H. Sridhara,S.G. Nizhner,D.G. Devaty,R.P. Choyke,W.J. - 掲載資料名:
- Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 264-268
- 発行年:
- 1998
- 巻:
- Part1
- 開始ページ:
- 553
- 終了ページ:
- 556
- 出版情報:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497911 [0878497919]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
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4
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Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient
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