High Growth Rate of α-SiC by Sublimation Epitaxy

High Growth Rate of α-SiC by Sublimation Epitaxy

著者名:

Syvajarvi,M.

Yakimova,R.

MacMillan,M.F.

Tuominen,M.

Kakanakova-Georgieva,A.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

143

終了ページ:

146

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation Tuominen,M., Yakimova,R., Kakanakova-Georgieva,A., MacMillan,M.F., Syvajarvi,M., Janzen,E. Trans Tech Publications	7 国際会議録 High Growth Rate Epitaxy of Thick 4H-SiC Layers Syvajarvi, M., Yakimova, R., Jacobsson, H., Linnarsson, M. K., Henry, A., Janzen, E. Trans Tech Publications
2 国際会議録 The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique Kakanakova-Georgieva,A., MacMillan,M.F., Nishino,S., Yakimova,R., Janzen,E. Trans Tech Publications	8 国際会議録 A Coupled Finite Element Model for the Sublimation Growth of SiC Raback,P., Nieminen,R., Yakimova,R., Tuominen,M., Janzen,E. Trans Tech Publications
3 国際会議録 Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques Kakanakova-Georgieva, A., Yakimova, R., Zhang, J., Storasta, L., Syvajarvi, M., Janzen, E. Trans Tech Publications	9 国際会議録 Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC Kassamakova, L., Kakanakov, R., Yakimova, R., Kakanakova-Georgieva, A., Syvajarvi, M., Wilzen, L., Janzen, E. Trans Tech Publications
4 国際会議録 Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC Yakimova,R., Syvajarvi,M., Janzen,E. Trans Tech Publications	10 国際会議録 Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers Kasamakova-Kolaklieva, L., Yakimova, R., Kakanakov, R., Kakanakova-Georgieva, A., Syvajarvi, M., Janzen, E. Trans Tech Publications
5 国際会議録 Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers Yakimova, R., Jacobson, H., Syvajarvi, M., Kakanakova-Georgieva, A., Iakimov, T., Virojanadara, C., Johansson, L.I., … Trans Tech Publications	11 国際会議録 Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC M. Syvajarvi, N. Sritirawisarn, R. Yakimova Trans Tech Publications
6 国際会議録 Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD Ellison,A., Kimoto,T., Ivanov,I.G., Wahab,Q., Henry,A., Kordina,O., Zhang,J., Hemmingsson,C.G., Gu,C.-Yu., Leys,M.R., … Trans Tech Publications	12 国際会議録 Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure Kakanakova-Georgieva, A., Forsberg, U., Magnusson, B., Yakimova, R., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12