Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence

Impurity Incorporation Mechanism in Step-Controlled Epitaxy Growth Temperature and Substrate Off-Angle Dependence

著者名:

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

111

終了ページ:

114

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles Saitoh, H., Kimoto, T. Trans Tech Publications	7 国際会議録 Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy Onojima, N., Kaido, J., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
2 国際会議録 Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy Nakamura, S., Hatayama, T., Kimoto, T., Fuyuki, T., Matsunami, H. Trans Tech Publications	8 国際会議録 Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications	9 国際会議録 Either Step-Flow or Layer-by-Layer Growth for AlN on SiC (0001)Substrates Suda, Jun, Onojima, Norio, Kimoto, Tsunenobu, Matsunami, Hiroyuki Materials Research Society
4 国際会議録 SiC Epitaxy on Non-Standard Surfaces Matsunami, H., Kimoto, T. Trans Tech Publications	10 国際会議録 EpitaxiaI Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition Saitoh, H., Manabe, A., Kimoto, T. Trans Tech Publications
5 国際会議録 Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces Nakamura, S.I., Kimoto, T., Matsunami, H. Trans Tech Publications	11 国際会議録 Surface Control of ZrB2 (0001)Substrate for Molecular-Beam Epitaxy of GaN Suda, Jun, Yamashita, Hiroyasu, Armitage, Robert, Kimoto, Tsunenobu, Matsunami, Hiroyuki Materials Research Society
6 国際会議録 4H-SiC (1120) Epitaxial Growth Kimoto, T., Yamamoto, T., Chen, Z. Y., Yano, H., Matsunami, H. Trans Tech Publications	12 国際会議録 Conductivity Control of SiC by In-Situ Doping and Ion Implantation Kimoto,T., Itoh,A., Inoue,N., Takemura,O., Yamamoto,T., Nakajima,T., Matsunami,H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12