Growth and Characterisation of SiC Power Device Material

Growth and Characterisation of SiC Power Device Material

著者名:

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

97

終了ページ:

102

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition Kordina,O., Irvine,K., Sumakeris,J., Kong,H.S., Paisley,M.J., ,C.H.Carter,Jr. Trans Tech Publications	7 国際会議録 CVD Growth of 3C-SiC on 4H-SiC Substrate A. Henry, X. Li, S. Leone, O. Kordina, E. Janzén Trans Tech Publications
2 国際会議録 SiC Seeded Boule Growth Tsvetkov,V., Glass,R.C., Henshall,D., Asbury,D., ,C.H.Carter,Jr. Trans Tech Publications	8 国際会議録 Concentrated Chloride-Based Epitaxial Growth of 4H-SiC A. Henry, S. Leone, S. Andersson, O. Kordina, E. Janzén Trans Tech Publications
3 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications	9 国際会議録 Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation Zhang, J., Forsberg, U., Isacson, M., Ellison, A., Henry, A., Kordina, O., Janzen, E. Trans Tech Publications
4 国際会議録 Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD S. Leone, H. Pedersen, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	10 国際会議録 Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation Zhang, J., Forsberg, U., Isacson, M., Ellison, A., Henry, A., Kordina, O., Janzen, E. Trans Tech Publications
5 国際会議録 Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers S. Leone, A. Henry, O. Kordina, E. Janzén Trans Tech Publications	11 国際会議録 Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals Si,W., Dudley,M., Glass,R.C., Tsvetkov,V., ,C.H.Carter,Jr. Trans Tech Publications
6 国際会議録 Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD Ellison,A., Kimoto,T., Ivanov,I.G., Wahab,Q., Henry,A., Kordina,O., Zhang,J., Hemmingsson,C.G., Gu,C.-Yu., Leys,M.R., … Trans Tech Publications	12 国際会議録 Surface Preparation of 4 ° Off-Axis 4H-SiC Substrate for Epitaxial Growth X. Li, J. ul Hassan, O. Kordina, E. Janzén, A. Henry Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12