Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim

Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim

著者名:

掲載資料名:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

シリーズ名:

Materials science forum

シリーズ巻号:

196-201

発行年:

1995

パート:

1

開始ページ:

549

終了ページ:

554

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020219
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS
回次:	18th
会議開催地:	Sendai, Japan
会議開催年:	1995.07.23-1995.07.28

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