Acceptor Compensation in Nitrogen Doped Zinc Selenide
- 著者名:
Song,C.D. Wu,Y.H. Suezawa,M. Nishiyama,F. Katayama-Yoshida,H. Yao,T. - 掲載資料名:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 196-201
- 発行年:
- 1995
- パート:
- 1
- 開始ページ:
- 297
- 終了ページ:
- 302
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Photoluminescence and Electron Paramagnetic Resonance of Nitrogen-Doped Zinc Selenide Epilayers
MRS - Materials Research Society |
Materials Research Society |
Trans Tech Publications | |
Trans Tech Publications |
9
国際会議録
Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |