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Photoluminescent Properties of Undoped GaN Prepared by Atmospheric Vapor Phase Epitaxy

著者名:
掲載資料名:
Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
シリーズ名:
Materials science forum
シリーズ巻号:
196-201
発行年:
1995
パート:
1
開始ページ:
49
終了ページ:
54
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497164 [0878497161]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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