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Coexistence of the DX0 and DX-State in Heavily Doped GaAs:Si?

著者名:
Goutiers,B.
Dmowski,L.
Willke,U.
Harris,J.J.
Rabary,M.
Portal,J.C.
さらに 1 件
掲載資料名:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
シリーズ名:
Materials science forum
シリーズ巻号:
143-147
発行年:
1994
巻:
Pt.2
開始ページ:
1161
終了ページ:
1166
出版情報:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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