Vacancy Related Metastable Defects in III-V Semiconductors-A Study of the EL2 and DX Center by Positron Annihilation,Photoconductivity and Infrared Spectroscopy

Vacancy Related Metastable Defects in III-V Semiconductors-A Study of the EL2 and DX Center by Positron Annihilation,Photoconductivity and Infrared Spectroscopy

著者名:

Krause-Rehberg,R.

掲載資料名:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

シリーズ名:

Materials science forum

シリーズ巻号:

143-147

発行年:

1994

巻:

Pt.2

開始ページ:

1099

終了ページ:

1104

出版情報:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020217
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors : ICDS-17
回次:	17th
会議開催地:	Gmunden, Austria
会議開催年:	1993.07.18-1993.07.23

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