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Monoenergetic Positron Beam Study of Heavily Si-doped GaAs Grown by MOCVD using Tertiarybutylarsine

著者名:
Chichibu,S.
Iwai,A.
Nakahara,Y.
Matsumoto,S.
Higuchi,H.
Wei,L.
Tanigawa,S.
さらに 2 件
掲載資料名:
Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992
シリーズ名:
Materials science forum
シリーズ巻号:
117-118
発行年:
1993
開始ページ:
315
終了ページ:
320
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496549 [0878496548]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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