An investrgatlon of the 78/2O3 meV double accep-tor in GaAs includmg the effects of hydrogen pas-sivation

An investrgatlon of the 78/2O3 meV double accep-tor in GaAs includmg the effects of hydrogen pas-sivation

著者名:

Addinall,R

掲載資料名:

Shallow impurities in semiconductors : proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990

シリーズ名:

Materials science forum

シリーズ巻号:

65-66

発行年:

1991

開始ページ:

175

終了ページ:

180

出版情報:

Aedermannsdorf: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496198 [087849619X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020214
シリーズID:	PA00000012
会議名:	International Conference on Shallow Impurities in Semiconductors
回次:	4th
会議開催地:	London, UK
会議開催年:	1990.07.31-1990.08.02

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