Blank Cover Image

STRUCTURE OF DISLOCATIONS IN PLASTICALLY-DEFORMED,HIGH PURITY GaAs.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part2
開始ページ:
775
終了ページ:
780
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 LATTICE MISMATCH EFFECTS IN GaAs EPITAXY ON Si AND GaP

Gerthsen, D., Ponce, F.A., Anderson, G.B., Chung, H.F.

Materials Research Society
7 国際会議録 Effect of Multi-Forging Condition on Deformed Structure and Mechanical Properties of A 99.995 Percent High Purity Aluminum

Q.F. Zhu, W.J. Wang, Z.H. Zhao, Y.B. Zuo, J.Z. Cui

Trans Tech Publications
2 国際会議録 *ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES

Ponce, F. A., Anderson, G. B., Ballingall, J. M.

Materials Research Society
8 国際会議録 MICROSTRUCTURE OF IMPURITY INDUCED DISORDERING AT THE GaAs/InGaAlP INTERFACE

Thorton, R. L., Ponce, F. A., Anderson, G. B., Endicott, F. J.

Materials Research Society
3 国際会議録 TRANSITION FROM AMORPHOUS TO CRYSTALLINE SILICON: EFFECT OF HYDROGEN ON FILM GROWTH

Tsai, C.C., Thompson, R., Doland, C., Ponce, F.A., Anderson, G.B., Wacker, B.

Materials Research Society
9 国際会議録 ANISOTROPIC ION BEAM ASSISTED ETCHING OF OPTICAL STRUCTURES IN GaAs AND InP

Scherer, A., Van Der Gaas, B.P., Kash, K., Craighead, H.G., Grabbe, P.

Materials Research Society
4 国際会議録 EXCIMER LASER INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON NEAR THRESHOLD

Bachrach, R.Z., Winer, K., Boyce, J.B., Ponce, F.A., Ready, S.E., Johnson, R., Anderson, G.B.

Materials Research Society
10 国際会議録 High-performance GaAs metal-semiconductor-metal photodetectors grown at intermediate temperatures

Tait,G.B., Sayles,A.H., Tousley,B.C., Paolella,A., Cooke,P.W.

SPIE-The International Society for Optical Engineering
5 国際会議録 ELECTRICAL PROPERTIES AND STRUCTURE DEFECTS IN EPITAXIAL CaF2 ON Si

Schowalter, L.J., Fathauer, R.W., Ponce, F.A., Anderson, G., Hashimoto, Shin

Materials Research Society
11 国際会議録 DISLOCATIONS IN PLASTICALLY DEFORMED GaAs:Cr.THERMAL CONDUCTIVITY MEASUREMENTS.

JOUGLAR,J., VUILLERMOZ,P.L.

Trans Tech Publications
6 国際会議録 PROPERTIES OF THE INTERFACE BETWEEN AMORPHOUS SILICON AND NITRIDE

Tsai, C.C., Street, R.A., Ponce, F., Anderson, G.B.

Materials Research Society
12 国際会議録 TEM STUDIES OF THE INFLUENCE OF THE ORIENTATION ON THE DISLOCATION STRUCTURES IN PLASTICALLY DEFORMED Ni3Al SINGLE CRYSTALS

Karnthaler, H.P., Rentenberger, C., Muhlbacher, E.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12