Epitaxial growth of gamma-al2O3 insulator films on Si by molecular beam epitaxy using an Al solid source and N2O gas
- 著者名:
- Wado, H. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
- Shimizu, T. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
- Ohtani, K. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
- Jung, Y.C. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
- Ishida, M. ( Department of Electrical and Electronic Engineering, Toyohashi University of Technology )
- 掲載資料名:
- Epitaxial oxide thin films II : symposium held November 26-30, 1995, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 401
- 発行年:
- 1996
- 開始ページ:
- 39
- 終了ページ:
- 44
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993044 [1558993045]
- 言語:
- 英語
- 請求記号:
- M23500/401
- 資料種別:
- 国際会議録
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