InGaAlP and InGaN Light-emitting diodes:high-power performance and reliability

InGaAlP and InGaN Light-emitting diodes:high-power performance and reliability

著者名:

Eliashevich,I. ( GELCore LLC/EMCORE Corp. )
Debray,J.-P.M.
Tran,C.A.
Venugopalan,H.
Karlicek,R.F.,Jr.

掲載資料名:

Light-emitting diodes : research, manufacturing, and applications IV : 26-27 January 2000, San Jose, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3938

発行年:

2000

開始ページ:

44

終了ページ:

51

出版情報:

Bellingham, Wash.: SPIE - The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819435552 [0819435554]

言語:

英語

請求記号:

P63600/3938

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019951
シリーズID:	PA00000029
会議名:	Photonics West - Optoelectronic Materials and Devices : Light-Emitting Diodes : Conference
回次:	2000 : 4th
会議開催地:	San Jose, CA, USA
会議開催年:	2000.01.26-200.01.27

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