Blank Cover Image

Luminescence From Erbium-Doped Gallium Nitride Thin Films

著者名:
Zavada, J. M.
Thaik, M.
Hommerich, U.
Mackenzie, J. D.
Abernathy, C. R.
Ren, F.
Shen, H.
Pamulapati, J.
Jiang, H.
Lin, J.
Wilson, R. G.
さらに 6 件
掲載資料名:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
537
発行年:
1999
開始ページ:
G11.1.1
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
言語:
英語
請求記号:
M23500/537
資料種別:
国際会議録

類似資料:

1 国際会議録 High-Temperature Photoluminescence and Photo-luminescence Excitation Spectroscopy of Er-Doped Gallium Nitride

Hommerich, U., Thaik, Myo, Robinson-Brown, T., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wilson, R. G., …

MRS - Materials Research Society
7 国際会議録 Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam …

Hommerich, U. H., Seo, J. T., MacKenzie, J. D., Abernathy, C. R., Birkhahn, R., Steckl, A. J., Zavada, J. M.

MRS-Materials Research Society
2 国際会議録 Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy

Hommerich, U., Seo, J. T., Thaik, M., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wilson, R. G., Zavada, J. M.

MRS - Materials Research Society
8 国際会議録 Characterization of Er-Doped III-V Nitride Epilayers Prepared by MOMBE

Zavada, J. M., Wilson, R. G., Schwartz, R. N., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wu, X., Hommerich, U.

MRS - Materials Research Society
3 国際会議録 Evaluation of Erbium Doped III-Nitride Semiconductors for Optoelectronic Applications

Hoemmerich, U., Thaik, M., Zavada, J.M., Schwartz, R.N., Wilson, R.G., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D.

Electrochemical Society
9 国際会議録 Infared LEDs Based on Er Doping of III-V Nitride Semiconductors

Zavada, J.M., Thaik, M., Hoemmerich, U., MacKenzie, J.D., Abernathy, C.R.

Electrochemical Society
4 国際会議録 Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical-Beam Epitaxy

MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Hommerich, U., Seo, J. T., Ren, F., Wilson, R. G., Chen, P., Zavada, …

MRS - Materials Research Society
10 国際会議録 1.55-ｦﾌm Er-doped GaN LED

Shen,H., Pamulapati,J., Taysing,M., Wood,M.C., Lareau,R.T., Ervin,M.H., Mackenzie,J.D., Ren,F., Abernathy,C.R., …

SPIE - The International Society for Optical Engineering
5 国際会議録 Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy

MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Donovan, S. M., Hommerich, U., Thaik, M., Wu, X., Ren, F., Wilson, …

MRS - Materials Research Society
11 国際会議録 Ferromagnetism and Near-infrared Luminescence in Neodymium and Erbium Doped Gallium Nitride via Diffusion

Nadia El-Masry, Melvyn Oliver Luen, Neeraj Nepal, Salah M. Bedair, John Zavada, Pavel Frajtag, Ei Brown, Uwe Hommerich

Materials Research Society
6 国際会議録 Hydrogen Passivation of Er-Doped AlN

Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Hommerich, U., Zavada, J. M., Ren, F., Wilson, R. G., Schwartz, R. …

MRS - Materials Research Society
12 国際会議録 76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er

Abernathy,C.R., Overberg,M.J., Mackenzie,J.D., Hommerich,U., Pearton,S.J., Wilson,R.G., Zavada,J.M.

SPIE - The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12