Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas | 東京工業大学附属図書館文献データベース

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Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas

著者名:

Willison, C. G.

Abernathy, C. R.

さらに 3 件

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G8.1.1.

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society	7 国際会議録 Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas Shul, R. J., Briggs, R. D., Han, J., Pearton, S. J., Lee, J. W., Vartuli, C. B., Killeen, K. P., Ludowise, M. J. MRS - Materials Research Society
2 国際会議録 High-Density Plasma Etching of Group-III Nitride Films for Device Application Shul, R., Zhang, L, Baca, A., Han, J., Crawford, M., Willison, C., Pearton, S., Ren, F., Zolper, J., Lester, L. Electrochemical Society	8 国際会議録 In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon Lee, J. W., Pearton, S. J., Abernathy, C. R., Vawter, G. A., Shul, R. J., Bridges, M. M., Willison, C. G. MRS - Materials Research Society
3 国際会議録 High-density plasma-induced etch damage of GaN Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J., Ren, F., Zolper, J.C., Lester, L.F. Materials Research Society	9 国際会議録 Selective deep-Si-trench etching with dimensional control Shul,R.J., Willison,C.G., Zhang,L. SPIE-The International Society for Optical Engineering
4 国際会議録 Selective Etching of Wide-Bandgap Nitrides Shul, R. J., Willison, C. G., Bridges, M. M., Han, J., Lee, J. W., Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., … MRS - Materials Research Society	10 国際会議録 ECR Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2 Shul, R. J., Baca, A. G., Rieger, D. J., Hou, H., Pearton, S. J., Ren, F. MRS - Materials Research Society
5 国際会議録 Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F. Materials Research Society	11 国際会議録 ECR, ICP and RIE plasma etching of GaN Shul, R.J., McClellan, G.B., Rieger, D.J., Hafich, M.J., Drummond, T.J., Pearton, S.J., Abernathy, C.R., Constantine, … Electrochemical Society
6 国際会議録 Comparison of Dry-Etch Techniques for GaN, InN, and AlN Shul, R. J., Vawter, G. A., Willison, C. G., Bridges, M. M., Lee, J. W., Pearton, S. J., Abernathy, C. R. MRS - Materials Research Society	12 国際会議録 ICP Dry Etching of III-V Nitrides Vartuli, C. B., Lee, J. W., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., … MRS - Materials Research Society

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