Photoelectrochemical Etching of InxGa1-xN

Photoelectrochemical Etching of InxGa1-xN

著者名:

Cho, H.

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G6.40.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

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2 国際会議録 Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN Cho, Hyun, Maeda, T., MacKenzie, J. D., Donovan, S. M., Abernathy, C. R., Pearton, S. J., Shul, R. J., Han, J., Ren, F. MRS - Materials Research Society	8 国際会議録 Low Bias Dry Etching of SiC and SiCN in ICP NF3 Discharges Wang, J. J., Cho, Hyun, Lambers, E. S., Pearton, S. J., Ostling, M., Zetterling, C-M., Grow, J. M., Ren, F., Shul, R. … MRS - Materials Research Society
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