A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
- 著者名:
Johnson, M. A. L. Yu, Z. Brown, J. D. Koeck, F. A. El-Masry, N. A. Kong, H. S. Edmond, J. A. Cook, J. W., Jr. Schetzina, J. F. - 掲載資料名:
- GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 537
- 発行年:
- 1999
- 開始ページ:
- G5.10.1
- 出版情報:
- Warrendale, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558994430 [1558994432]
- 言語:
- 英語
- 請求記号:
- M23500/537
- 資料種別:
- 国際会議録
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1
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MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple rf Plasma Sources
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