Blank Cover Image

Studies on Carbon as Alternative p-Type Dopant for Gallium Nitride

著者名:
Birkle, U.
Fehrer, M.
Kirchner, V.
Einfeldt, S.
Hommel, D.
Strauf, S.
Michler, P.
Gutowski, J.
さらに 3 件
掲載資料名:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
537
発行年:
1999
開始ページ:
G5.6.1
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
言語:
英語
請求記号:
M23500/537
資料種別:
国際会議録

類似資料:

1 国際会議録 Influence of Doping on the Lattice Dynamics of Gallium Nitride

Kaschner, A., Siegle, H., Hoffmann, A., Thomsen, C., Birkle, U., Einfeldt, S., Hommel, D.

MRS - Materials Research Society
7 国際会議録 Deep Trap Characterization in GaN Using Thermal and Optical Admittance Spectroscopy

KrTschil, A., Witte, H., Lisker, M., Christen, J., Birkle, U., Einfeldt, S., Hommel, D., Topf, M., Meyer, B. K.

MRS - Materials Research Society
2 国際会議録 Optical Admittance Spectroscopy of Deep Centers in Galliunrnitride-Correlation with Photoluminescence

Krtschil,A., Fischer,P., Witte,H., Lisker,M., Christen,J., Birkle,U., Einfeldt,S., Hommel,D.

Trans Tech Publications
8 国際会議録 Thermal expansion of GaN at low temperatures - a comparison of bulk and homo- and heteroepitaxial layers

Kirchner, V., Heinke, H., Einfeldt, S., Hommel, D., Domagala, J. Z., Leszczynski, M.

MRS-Materials Research Society
3 国際会議録 Investigation of Green Emitting Monolithic II-VI Vertical Cavity Surface Emitting Laser

Kruse, C., Alexe, G., Kroger, R., Klude, M., Heinke, H., Hommel, D., Ulrich, S., Michler, P., Gutowski, J.

Materials Research Society
9 国際会議録 MBE Growth of GaN on NdGaO3(101)

Fechtmann, C., Kirchner, V., Einfeldt, S., Heinke, H., Hommel, D., Lukasiewicz, T., Luczynski, Z., Baranowski, J.

MRS - Materials Research Society
4 国際会議録 Micro-Photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

Sebald, K., Lohmeyer, H., Gutowski, J., Einfeldt, S., Roder, C., Hommel, D.

Materials Research Society
10 国際会議録 Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-？-nitride semiconductor …

Schubert,M., Kasic,A., Figge,S., Diesselberg,M., Einfeldt,S., Hommel,D., Kohler,U., As,D.J., Off,J., Kuhn,B., Scholz,F., …

SPIE-The International Society for Optical Engineering
5 国際会議録 Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se)quantum well lasers

Michler,P., Pereira,M.F.,Jr., Homburg,O., Nerger,L., Gutowski,J., Wenisch,H., Hommel,D.

SPIE - The International Society for Optical Engineering
11 国際会議録 Time dependent diffusion of P-TYPE dopants in Gallium arsenide

Robinson, H. G., Jones, K. S., Deal, M. D., Hu, C. J.

MRS - Materials Research Society
6 国際会議録 Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN

Birkle,U., Thomas,C., Fehrer,M., Einfldt,S., Heinke,H., Hommel,D.

Trans Tech Publications
12 国際会議録 Analytical Model for Calculating Exciton Energies as Measured in Zn1-xCdxSe/ZnSe and ZnSe/ZnSxSe1-x Quantum Wells

Wulfes,A., Gutowski,J., Kurtz,E., Hommel,D., Scholl,M., Heuken,M.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12