Optical and Structural Properties of Er3+-Doped GaN Grown by MBE | 東京工業大学附属図書館文献データベース

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Optical and Structural Properties of Er3+-Doped GaN Grown by MBE

著者名:

Birkhahn, R. H.

さらに 3 件

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.80.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 FLUORESCENCE DYNAMICS OF Er3+ IONS IN MBE-GROWN GaN-THIN FILMS Pelle, F., Auzel, F., Zavada, J.M., Hommerich, U., Lee, D.S., Steckl, A.J. Kluwer Academic Publishers	7 国際会議録 Effect of indium surfactant on the optical and structural properties of MBE-grown GaN Fong,W.K., Zhu,C.F., Surya,C., Leung,B.H., Cheng,C.C., Sundaravel,B., Luo,E.Z., Xu,J.B., Wilson,I.H. SPIE - The International Society for Optical Engineering
2 国際会議録 Comparison of the optical properties of Er3+ doped gallium nitride prepared by metalorganic molecular beam epitaxy (MOMBE) and solid source molecular beam … Hommerich, U. H., Seo, J. T., MacKenzie, J. D., Abernathy, C. R., Birkhahn, R., Steckl, A. J., Zavada, J. M. MRS-Materials Research Society	8 国際会議録 Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si As, D. J., Richter, A., Busch, J., Schottker, B., Lubbers, M., Mimkes, J., Schikora, D., Lischka, K., Kriegseis, W., … MRS-Materials Research Society
3 国際会議録 Er-Doping of GaN and Related Alloys Pearton, S. J., Abernathy, C. R., MacKenzie, J. D., Schwartz, R. N., Wilson, R. G., Zavada, J. M., Shul, R. J. MRS - Materials Research Society	9 国際会議録 Comparison of Er3+ Photoluminescence and Photoluminescence Excitation Spectroscopy in In Situ-Doped GaN:Er and Er-Implanted GaN Mitofsky, Andrea M., Papen, George C., Bishop, Stephen G., Lee, Dong-Seon, Steckl, Andrew J. Materials Research Society
4 国際会議録 Photoluminescence enhancement and morphological properties of carbon co-doped GaN: Er Overberg. M. E., Abernathy, C. R., Pearton, S. J., Wilson, R. G., Zavada, J. M. MRS-Materials Research Society	10 国際会議録 Properties of H, O and C in GaN Pearton, S. J., Abernathy, C. R., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Ren, F., Wilson, R. G., Zavada, J. M., … MRS - Materials Research Society
5 国際会議録 The Effect of Hydrogen/Deuterium Introduction on Photoluminescence of 3C-SiC Crystals Lee, B. K., Steckl, A. J., Zavada, J. M., Wilson, R. G. MRS - Materials Research Society	11 国際会議録 Properties of Homoepitaxially MBE-Grown GaN Suski, T., Krueger, J., Kisielowski, C., Phatak, P., Leung, M. S. H., Liliental-Weber, Z., Gassmann, A., Newman, N., … MRS - Materials Research Society
6 国際会議録 Deuterium Introduction Into 6H and 3C-SiC Crystals and Thermal Stability with Annealing Zavada, J.M., Wilson, R.G., Pearton, S.J., Lee, B.K., Steckl, A.J. Electrochemical Society	12 国際会議録 Optical Properties and Morphology of GaN Grown by MBE on Sapphire Substrates Tuncel, E., Oberman, D. B., Lee, H., Ueda, T., Harris, J. S., Jr. MRS - Materials Research Society

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