Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

Piezoelectric Level Splitting in GaInN/GaN Quantum Wells

著者名:

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.66.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 *Spectroscopy in polarized and piezoelectric AlGaInN heterostructures Wetzel, C., Takeuchi, T., Amano, H., Akasaki, I. MRS-Materials Research Society	7 国際会議録 Localized Donors in GaN: Spectroscopy Using Large Pressures Wetzel, C., Amano, H., Akasaki, I., Suski, T., Ager, J. W., Weber, E. R., Haller, E. E., Meyer, B. K. MRS - Materials Research Society
2 国際会議録 Piezoelectric Quantization in GalnN Thin Films and Multiple-Quantum-Well Structures Wetzel, Christian, Takeuchi, Tetsuya, Amano, Hiroshi, Akasaki, Isamu MRS - Materials Research Society	8 国際会議録 Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure Wetzel, C., Walukiewicz, W., Haller, E. E., Amano, H., Akasaki, I. MRS - Materials Research Society
3 国際会議録 Structural and Optical Properties of Nitride-Based Heterostructure and Quantum-Well Structure Amano, H., Takeuchi, T., Sota, S., Sakai, H., Akasaki, I. MRS - Materials Research Society	9 国際会議録 Piezoelectric Field Effect on Optical Properties of GaN/GaInN/AlGaN Quantum Wells Im. J. S., Kollmer, H., Gfrorer, O., Off, J., Scholz, F., Hangleiter, A. MRS - Materials Research Society
4 国際会議録 Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers Amano, H., Iwaya, M., Hayashi N., Kashima, T., Katsuragawa, M., Takeuchi, T., Wetzel, C., Akasaki, I. MRS - Materials Research Society	10 国際会議録 Growth of crack-free thick AlGaN layer and its application to GaN based laser diodes Akasaki, I., Kamiyama, S., Detchprohm, T., Takeuchi, T., Amano, H. MRS-Materials Research Society
5 国際会議録 Heteroepitaxy of Group III Nitrides for Device Applications Amano,H., Takeuchi,T., Sakai,H., Yamaguchi,S., Wetzel,C., Akasaki,I. Trans Tech Publications	11 国際会議録 High Efficiency UV Emitter Using High Quality GaN/AlxGa1-xN Multi-Quantum Well Active Layer Iwaya, M., Terao, S., Ukai, T., Nakamura, R., Kamiyama, S., Amano, H., Akasaki, I. Materials Research Society
6 国際会議録 Gain switching of GaInN MQW laser diodes Marinelli,C., Khrushchev,I.Y., Rorison,J.M., Penty,R.V., White,I.H., Takeuchi,T., Amano,H., Akasaki,I., Kaneko,Y., … SPIE - The International Society for Optical Engineering	12 国際会議録 Radiative Recombination in InGaN/GaN Multiple Quantum Wells Bergman, J. P., Monemar, B., Pozina, G., Sernelius, B. E., Holtz, P. O., Amano, H., Akasaki, I. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12