Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties | 東京工業大学附属図書館文献データベース

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Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

著者名:

さらに 4 件

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.59.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

類似資料:

1 国際会議録 Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy Grandjean, N., Massies, J., Leroux, M., Laugt, M., Lefebvre, P., Gil, B., Allegre, J., Bigenwald, P. MRS - Materials Research Society	7 国際会議録 High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Peralta, L. Grave de, Seryogin, G. A., Holtz, M., … MRS-Materials Research Society
2 国際会議録 Si-and Mg-Doped GaN Layers Grown by Gas Source Molecular-Beam Epitaxy Using Ammonia Grandjean, N., Massies, M., Leroux, M. MRS - Materials Research Society	8 国際会議録 Quantum-Confined Stark Effect and Recombination Dynamics of Spatially Indirect Excitons in MBE-Grown GaN-AlGaN Quantum Wells Lefebvre, P., Gil, B., Allegre, J., Mathieu, H., Grandjean, N., Leroux, M., Massies, J., Bigenwald, P. MRS - Materials Research Society
3 国際会議録 Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth Grandjean, N., Massies, J., Vennegues, P., Laugt, M., Leroux, M. MRS - Materials Research Society	9 国際会議録 Comparative Study of GaN MOVPE Growth Processes Using Two Different "Surface Preparation-Carrier Gas" Combinations Vennegues, P., Haffouz, S., Bouille, A., Leroux, M., Beaumont, B. MRS - Materials Research Society
4 国際会議録 Effect of V/III Ratio on the Properties of GaN Layers Grown by Molecular-Beam Epitaxy Using NH3 Grandjean, N., Leroux, M., Massies, J., Mesrine, M., Lorenzini, P. MRS - Materials Research Society	10 国際会議録 Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy Kaschner, A., Holst, J., Gfug, U. von, Hoffmann, A., Bertram, F., Riemann, T., Rudloff, D., Fischer, P., Christen, J., … MRS-Materials Research Society
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