Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD

Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD

著者名:

Elsner, J.

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.29.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

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3 国際会議録 Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD Xie, Z. Y., Wei, C. H., Li, L. Y., Edgar, J. H., Chaudhuri, J., Ignatiev, C. MRS - Materials Research Society	9 国際会議録 GaN Nanotubes Lee, S. M., Lee, Y. H., Hwang, Y. G., Elsner, J., Porezag, D., Frauenheim, T. MRS - Materials Research Society
4 国際会議録 *Structural and electronic properties of line defects in GaN Elsner, J., Blumenau, A. T., Frauenheim, T., Jones, R., Heggie, M. I. MRS-Materials Research Society	10 国際会議録 PLD Epitaxial TiN Contacts to 6H-SiC and GaN Talyansky, V., Vispute, R. D., Andronescu, S. N., Iliadis, A. A., Jones, K. A., Choopun, S., Downes, M. J., Sharma, R. … MRS - Materials Research Society
5 国際会議録 Struetural and electrical properties of threading dislocations in GaN Elsner,J., Jones,R., Sitch,P.K., Frauenheim,Th., Heggie,M.I., Oberg,S., Briddon,P.R. Trans Tech Publications	11 国際会議録 (1010)- and (1120)-Surfaces in 2H-, 4H- and 6H-SiC Rauls, E., Hajnal, Z., Deak, P., Frauenheim, Th. Trans Tech Publications
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