Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

著者名:

Robins, L. H.

掲載資料名:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

537

発行年:

1999

開始ページ:

G3.22.1

出版情報:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

言語:

英語

請求記号:

M23500/537

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019847
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	1998
会議開催地:	Boston, MA, USA
会議開催年:	1998.11.30-1998.12.04

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2 国際会議録 A Model for Indium Incorporation in the Growth of InGaN Films Piner, E. L., McIntosh, F. G., Roberts, J. C., Boutros, K. S., Aumer, M. E., Joshkin, V. A., El-Masry, N. A., Bedair, S. … MRS - Materials Research Society	8 国際会議録 EFFECTS OF HIGHLY STRAINED SUPERLSTTICES ON THE THREADING DISLOCATION BEHAVIOR IN GaAS GROWN ON SILICAN El-Masry, N.A., Tarn, J.C.L., Karam, N.H., Bedair, S.M. Materials Research Society
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