Electronic Structure and Temperature Dependence of Excitons in GaN

Electronic Structure and Temperature Dependence of Excitons in GaN

著者名:

Buyanova, I. A.

掲載資料名:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

423

発行年:

1996

開始ページ:

675

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

言語:

英語

請求記号:

M23500/423

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019836
シリーズID:	PA00000011
会議名:	Symposium on III-nitride, SiC and diamond materials for electronic devices
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

類似資料:

1 国際会議録 Exciton Lifetimes in GaN Bergman, J. P., Harris, C., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	7 国際会議録 Role of the Substitutional Oxygen Donor in the Residual n-Type Conductivity in GaN Chen, W. M., Buyanova, I. A., Wagner, Mt., Monemar, B., Lindstrom, J. L., Amano, H., Akasaki, I. MRS - Materials Research Society
2 国際会議録 Room Temperature Photoluminescence Linewidth versus Material Quality of GaN Monemar,B., Buyanova,I.A., Bergman,J.P., Amano,H., Akasaki,I. Trans Tech Publications	8 国際会議録 Radiative Recombination in InGaN/GaN Multiple Quantum Wells Bergman, J. P., Monemar, B., Pozina, G., Sernelius, B. E., Holtz, P. O., Amano, H., Akasaki, I. Trans Tech Publications
3 国際会議録 Photoluminescence Related to the 2-Dimensional Electron Gas in Modulation Doped GaN/AlGaN Structures Bergman, J. P., Lundstrom, T., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	9 国際会議録 Evidence of Potential Fluctuations in Modulation-Doped GaN/AlGaN Heterostructures Buyanov, A. V., Sandberg, J., Bergman, J. P., Sernelius, B. E., Holtz, P-O., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society
4 国際会議録 Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures Monemar,B., Bergman,J.P., Pozina,G., Dalfors,J., Sernelius,B.E., Holtz,P.O., Amano,H., Akasaki,I. SPIE - The International Society for Optical Engineering	10 国際会議録 Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures Monemar, B., Paskov, P.P., Haratizadeh, H., Pozina, G.R., Bergman, J.P., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. SPIE-The International Society for Optical Engineering
5 国際会議録 Optical Properties of InGaN/GaN Multiquantum-Well Structures Bergman, J. P., Saksulv, N., Dalfors, J., Holtz, P. O., Monemar, B., Amano, H., Akasaki, I. MRS - Materials Research Society	11 国際会議録 Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport Pozina, G., Bergman, J.P., Monemar, B., Iwaya, M., Nitta, S., Amano, H., Akasaki, I. Trans Tech Publications
6 国際会議録 Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures Monemar, B., Bergman, J. P., Dalfors, J., Pozina, G., Sernelius, B. E., Holtz, P. O., Amano, H., Akasaki, I. MRS - Materials Research Society	12 国際会議録 Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells Monemar, B., Paskov, P.P., Bergman, J.P., Pozina, G., Kamiyama, S., Iwaya, M., Amano, H., Akasaki, I. Materials Research Society

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