Factors Influencing the Electrical and Optical Properties of AlGaN Layers on Sapphire

Factors Influencing the Electrical and Optical Properties of AlGaN Layers on Sapphire

著者名:

Shin, M.

掲載資料名:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

423

発行年:

1996

開始ページ:

643

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

言語:

英語

請求記号:

M23500/423

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019836
シリーズID:	PA00000011
会議名:	Symposium on III-nitride, SiC and diamond materials for electronic devices
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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1 国際会議録 The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of AlGaN Samples Grown on Sapphire Polyakov, A. Y., Shin, M., Pearton, S. J., Skowronski, M., Greve, D. W., Freitas, J. A. MRS - Materials Research Society	7 国際会議録 Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition Chung, H.J., Huh, S.W., Polyakov, A.Y., Nigam, S., Li, Q., Grim, J., Skowronski, M., Glaser, E.R., Carlos, W.E., … Trans Tech Publications
2 国際会議録 Growth of AlBN Solid Solution by OMVPE Shin, M., Polyakov, A. Y., Qian, W., Skowronski, M., Greve, D. W., Wilson, R. G. MRS - Materials Research Society	8 国際会議録 THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb Polyakov, A. Y., Stam, M., Milnes, A. G., Wilson, R. G., Bochkarev, A. E., Raichoudhyry, P., Hillard, R. J., Pearton, S. … Materials Research Society
3 国際会議録 Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE Polyakov, A. Y., Govorkov, A. V., Smirnov, N. B., Shin, M., Skowronski, M., Greve, D. W. MRS - Materials Research Society	9 国際会議録 Electrical and Optical Properties of C, O and H in III-V Nitrides Pearton, S.J., Lee, J.W., Abernathy, C.R., Wilson, R.G., Zavada, J.M., Zolper, J.C. Electrochemical Society
4 国際会議録 Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy Shin,M., Polyakov,A.Y., Skowronski,M., Rohrer,G.S., Wilson,R.G. Trans Tech Publications	10 国際会議録 Optical and Electrical Properties of Al1-xInxN Films Grown on Sapphire (0001) by Plasma Source Molecular Beam Epitaxy Danylyuk, Y.V., Lukitsch, M. J., Huang, C., Auner, G. W., Naik, R., Naik, V. M. Materials Research Society
5 国際会議録 Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiC Smith, A. R., Ramachandran, V., Feenstra, R. M., Greve, D. W., Neugebauer, J., Northrup, J. E., Shin, M., Skowronski, M. MRS - Materials Research Society	11 国際会議録 Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire Niebuhr, R., Bachem, K. H., Behr, D., Hoffmann, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouviere, … MRS - Materials Research Society
6 国際会議録 High-Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE Goorsky, M. S., Polyakov, A. Y., Skowronski, M., Shin, M., Greve, D. W. MRS - Materials Research Society	12 国際会議録 Electrical and Optical Investigation of the Position of Vanadium Related Defects in the 4H and 6H SiC Bandgaps Jenny, J. R., Skowronski, M., Mitchel, W. C., Smith, S. R., Evwaraye, A. O., Hobgood, H. M., Augustine, G., Hopkins, R. … MRS - Materials Research Society

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