The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of AlGaN Samples Grown on Sapphire

The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of AlGaN Samples Grown on Sapphire

著者名:

Polyakov, A. Y.

掲載資料名:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

423

発行年:

1996

開始ページ:

607

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

言語:

英語

請求記号:

M23500/423

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019836
シリーズID:	PA00000011
会議名:	Symposium on III-nitride, SiC and diamond materials for electronic devices
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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