Properties of Homoepitaxially MBE-Grown GaN
- 著者名:
Suski, T. Krueger, J. Kisielowski, C. Phatak, P. Leung, M. S. H. Liliental-Weber, Z. Gassmann, A. Newman, N. Rubin, M. D. Weber, E. R. Grzegory, I. Jun, J. Bockowski, M. Porowski, S. Helava, H. I. - 掲載資料名:
- III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 423
- 発行年:
- 1996
- 開始ページ:
- 329
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993266 [1558993266]
- 言語:
- 英語
- 請求記号:
- M23500/423
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |