Blank Cover Image

Nucleation and Growth of Gallium Nitride Films on Si and Sapphire Substrates Using Buffer Layers

著者名:
Perkins, N. R.
Horton, M. N.
Zhi, D.
Matyi, R. J.
Bandic, Z. Z.
McGill, T. C.
Kuech, T. F.
さらに 2 件
掲載資料名:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
423
発行年:
1996
開始ページ:
287
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
言語:
英語
請求記号:
M23500/423
資料種別:
国際会議録

類似資料:

1 国際会議録 Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates

Perkins, N. R., Horton, M. N., Bandic, Z. Z., McGill, T. C., Kuech, T. F.

MRS - Materials Research Society
7 国際会議録 Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source

Zhang, L., Zhang, R., Boleslawski, M. P., Kuech, T. F.

MRS - Materials Research Society
2 国際会議録 High Resolution X-ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy

Matyi, R. J., Zhi, D., Perkins, N. R., Horton, M. N., Kuech, T. F.

MRS - Materials Research Society
8 国際会議録 Design and Fabrication of Nitride-Based High-Power Devices

Bandic, Z. Z., Piquette, E. C., Bridger, P. M., Kuech, T. F., McGill, T. C.

MRS - Materials Research Society
3 国際会議録 Growth of Thick GaN Films by Halide Vapor Phase Epitaxy

Perkins, N.R., Horton, M.N., Matyi, R.J., Bandie, Z.Z., McGill, T.C., Kuech, T.F.

Electrochemical Society
9 国際会議録 THE EFFECT OF SELF NUCLEATION LAYERS ON THE MOCVD GROWTH OF GALLIUM NITRIDE ON SAPPHIRE

Wickenden, D. K., Kistenmacher, T. J., Bryden, W. A., Morgan, J. S., Wickenden, Estes

Materials Research Society
4 国際会議録 Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

Safvi, S. A., Perkins, N. R., Horton, M. N., Thon, A., Zhi, D., Kuech, T. F.

MRS - Materials Research Society
10 国際会議録 Experimental Study of Sputter-Deposited Contacts to Gallium Nitride

Piquette, E. C., Bandic, Z. Z., McGill, T. C.

MRS - Materials Research Society
5 国際会議録 Effect of Growth Parameters and Local Gas-Phase Concentrations on the Uniformity and Material Properties of GaN/Sapphire Grown by Hydride Vapor-Phase Epitaxy

Safvi, S. A., Perkins, N. R., Horton, M. N., Kuech, T. F.

MRS - Materials Research Society
11 国際会議録 Effect of buffer layer on the growth of GaN films on sapphire

Xu,K., Qiu,R., Xu,J., Fang,Z., Deng,P., Wu,X., Wang,M., Ming,N.

SPIE-The International Society for Optical Engineering
6 国際会議録 Dislocation arrangement in a thick LEO GaN film on sapphire

Dunn, K. A., Babcock, S. E., Stone, D. S., Matyi, R. J., Zhang, L., Kuech, T. F.

MRS-Materials Research Society
12 国際会議録 Growth of III-Nitrides by rf-Assisted Molecular-Beam Epitaxy

Piquette, E. C., Bridger, P. M., Bandic, Z. Z., McGill, T. C.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12