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High Resolution X-ray Diffraction Analysis of Gallium Nitride Grown on Sapphire by Halide Vapor Phase Epitaxy

著者名:
掲載資料名:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
423
発行年:
1996
開始ページ:
239
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
言語:
英語
請求記号:
M23500/423
資料種別:
国際会議録

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