Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals

著者名:

Eckstein, R.

掲載資料名:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

423

発行年:

1996

開始ページ:

215

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

言語:

英語

請求記号:

M23500/423

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019836
シリーズID:	PA00000011
会議名:	Symposium on III-nitride, SiC and diamond materials for electronic devices
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

類似資料:

1 国際会議録 Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality Hofmann, D., Eckstein, R., Kadinski, L., Kolbl, M., Muller, M., Muller, St. G., Schmitt, E., Weber, A., Winnacker, A. MRS - Materials Research Society	7 国際会議録 Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality Epelbaum, B.M., Hofmann, D., Bickermann, M., Winnacker, A. Trans Tech Publications
2 国際会議録 Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals Muller,St.G., Eckstein,R., Hartung,W., Hofmann,D., Kolbl,M., Pensl,G., Schmitt,E., Schmitt,E.J., Weber,A.-D., … Trans Tech Publications	8 国際会議録 Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal Quality Epelbaum, B.M., Hofmann, D., Bickermann, M., Winnacker, A. Trans Tech Publications
3 国際会議録 Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer,Mass Transport and Heat of Crystallization and Results on its Experimental … Muller,St.G., Eckstein,R., Hofmann,D., Kadinski,L., Kaufmann,P., Kolbl,M., Schmitt,E. Trans Tech Publications	9 国際会議録 Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions Schmitt, E., Rasp, M., Weber, A.-D., Koelbl, M., Eckstein, R., Kadinski, L., Selder, M. Trans Tech Publications
4 国際会議録 Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC Muller, St. G., Hofmann, D., Winnacker, A. MRS-Materials Research Society	10 国際会議録 Equilibrium Growth Morphologies of SiC Polytypes Muller,St.G., Eckstein,R., Grimbergen,R.F.P., Hofmann,D., Rexer,B. Trans Tech Publications
5 国際会議録 Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals Hofmann, D., Bickermann, M., Hartung, W., Winnacker, A. Trans Tech Publications	11 国際会議録 Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth Muller, St. G., Fricke, J., Hofmann, D., Horn, R., Nilsson, O., Rexer, B. Trans Tech Publications
6 国際会議録 Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth Bickermann, M., Hofmann, D., Straubinger, T.L., Weingartner, R., Winnacker, A. Trans Tech Publications	12 国際会議録 Growth and characterization of 2" 6H-silicon carbide Schmitt, E., Eckstein, R., Kolbl, M. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12