OBIC Measurements on 6H-SiC Schottky Diodes

OBIC Measurements on 6H-SiC Schottky Diodes

著者名:

掲載資料名:

III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

423

発行年:

1996

開始ページ:

51

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993266 [1558993266]

言語:

英語

請求記号:

M23500/423

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019836
シリーズID:	PA00000011
会議名:	Symposium on III-nitride, SiC and diamond materials for electronic devices
回次:	1996
会議開催地:	San Francisco, CA, USA
会議開催年:	1996.04.08-1996.04.12

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2 国際会議録 Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC Dahlquist,F., Zetterling,C.-M., Ostling,M., Rottner,K. Trans Tech Publications	8 国際会議録 Studies of the Ambient Dependent Inversion Capacitance of Catalytic Metal-Oxide-Silicon Carbide Devices Based on 6H- and 4H-SiC Material Tobias,P., Baranzahi,A., Lundstrom,I., Schoner,A., Rottner,K., Karlsson,S., Martensson,P., Spetz,A.Lloyd Trans Tech Publications
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