Blank Cover Image

Improved hot-carrier reliability of MOSFET analog performance with NO-nitrided SiO2 gate dielectrics

著者名:
掲載資料名:
Microelectronic Device and Multilevel Interconnection Technology
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
2636
発行年:
1995
開始ページ:
190
終了ページ:
197
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420022 [0819420026]
言語:
英語
請求記号:
P63600/2636
資料種別:
国際会議録

類似資料:

1 国際会議録 Electrical characteristics of n-and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics

Han,L.K., Wang,H., Yan,J., Kim,J.H., Yoon,G.W., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
7 国際会議録 Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Yan,J., Han,L.K., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
2 国際会議録 High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient

Han, L.K., Kim, J., Wang, H.H., Yan, J., Kwong, D.L.

Electrochemical Society
8 国際会議録 Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing

Bhat, M., Cho, T.H., Yan, J., Han, L.K., Kwong, D.L.

Electrochemical Society
3 国際会議録 Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides

Han, L.K, Wang, H.H., Yoon, G.W., Allman, D., Kwong, D.L.

Electrochemical Society
9 国際会議録 Hot Carrier Stress and Breakdown Impact on High-frequency MOSFET Analog Performance

Pantisano, L., Schreurs, D., Kaczer, B., Simoen, E., Groeseneken, G.

Electrochemical Society
4 国際会議録 Dependence of MOSFET hot-carrier aging on PECVD oxide process

Han,L.K., Allman,D., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
10 国際会議録 Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications

Kim,B.Y., Wristers,D., Kwong,D.L.

SPIE-The International Society for Optical Engineering
5 国際会議録 Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides

Kim, B.Y., Han, L.K., Wristers, D., Fulford, J., Kwong, D.-L.

Electrochemical Society
11 国際会議録 Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing

Wang,H.H., Han,L.K., Yan,J., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
6 国際会議録 Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J.

Electrochemical Society
12 国際会議録 Effects of various RIE process-induced damages on MOSFET characteristics

Min,B.W., Han,L.K., Joshi,A.B., Mann,R., Chung,L., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12