Preparation and Properties of PECVD Silicon Nitride Films from SIH4+ NH3 and/or NF3 and SiF4+ NH3 Gas Mixtures

Preparation and Properties of PECVD Silicon Nitride Films from SIH4+ NH3 and/or NF3 and SiF4+ NH3 Gas Mixtures

著者名:

掲載資料名:

Plasma properties, deposition and etching

シリーズ名:

Materials science forum

シリーズ巻号:

140-142

発行年:

1993

開始ページ:

319

終了ページ:

334

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496709 [087849670X]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019749
シリーズID:	PA00000012

類似資料:

1 国際会議録 EFFECT OF RF PLASMA ON SILICON NITRIDE DEPOSITION FROM SiF4/NH3 GAS MIXTURES IN A HOT WALL REACTOR Gomez, Aleixandre, C., Sanchez, O., Albella, J. M. Materials Research Society	7 国際会議録 Plasma chemistry in the CVD synthesis of nanodiamond films Gordillo-Vazquez, F. J., Gomez-Aleixandre, C., Albella, J. M. Electrochemical Society
2 国際会議録 PACVD FLUORINATED SILICON NITRIDE FILMS DEPOSITED FROM SiF4/NH3 GAS MIXTURES Castro, A., Gasset, M., Gomez-Aleixandre, C., Sanchez, O., Albella, J. M. Materials Research Society	8 国際会議録 Mechanistic Studies of the CVD of Silicon Nitride from SiF4 and NH3 Buss, R.J., Ho, P. Electrochemical Society
3 国際会議録 Growth of ECR-CVD Carbon Nitride Films With a High Nitrogen Content from CH4/N2/Ar Mixtures Camero, M., Gomez-Aleixandre, C., Albella, J.M. Electrochemical Society	9 国際会議録 COMPOSITION AND PROPERTIES OF PECVD SILICON NITRIDE FILMS DEPOSITED FROM SiH4, N2, He GASES Souk, J.H., Parsons, G.N., Batey, J. Materials Research Society
4 国際会議録 Growth Kinetics of Chemically Vapor Deposited Silica Films from Silane/Oxygen Mixtures Ojeda, F., Castro-Garcia, A., Gomez-Aleixandre, C., Albella, J.M. Electrochemical Society	10 国際会議録 Chemical Vapor Deposition of Silica Films from Silane/Oxygen Mixtures in a Cold-Wall Reactor Ojeda, F., Albella, J.M. Electrochemical Society
5 国際会議録 Fluorinated Silicon Nitride Film Deposited at Low Temperatures from SiH4-SiF4-NH3 Park, Y-B., Rhee, S., Choi, J-H., Kim, C-W., Suok, J. H. MRS - Materials Research Society	11 国際会議録 The Effect of H2 Dilution on Thin Film SiN Deposited by Hot Wire CVD Using SiH4 and NH3 Gas Mixtures Dillon, A.C., Gedvillas, L., Williamson, D.L., Thiesen, J., Perkins, J.D., Mahan, A.H. Materials Research Society
6 国際会議録 COMPARATIVE STUDY OF THE OPTICAL AND VIBRATIONAL PROPERTIES OF a-SiNX:H FILMS PREPARED FROM SiH4-N2 AND SiH4-NH3 GAS MIXTURES BY RF PLASMA Campmany, J., Bertran, E., Andujar, J.L., Canillas, A., Lopez-Villegas, J.M., Morante, J.R. Materials Research Society	12 国際会議録 High-Rate (＞ 1nm/s) and Low-Temperature (＜ 400℃) Deposition of Silicon Nitride Using an N2/SiH4 and NH3/SiH4 Expanding Thermal Plasma Hong, J., Kessels, W. M. M., Sanden, M. C. M. van de Materials Research Society

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