Blank Cover Image

A MODEL FOR THE ATOMIC CONFIGURATION OF THE EL2 DEFECT IN GaAs.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part1
開始ページ:
305
終了ページ:
310
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs

Bardeleben,H.J.von, Bourgoin,J.C., Stievenard,D.

Trans Tech Publications
7 国際会議録 Intrinsic defects in electron irradiated p-type GaAs

Jia,Y.Q., Bardeleben,H.J.von, Stievenard,D., Delerue,C.

Trans Tech Publications
2 国際会議録 The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model

Bardeleben,H.J.von, Delerue,C., Stievenard,D.

Trans Tech Publications
8 国際会議録 *INTRINSIC DEFECTS IN GaAs - THE CASE OF EL2

von Bardeleben, H. J., Stievenard, D.

Materials Research Society
3 国際会議録 THE METASTABILITY OF THE EL2 AND DX DEFECTS IN GaAs AND 3-5 ALLOYS

von Bardeleben, H.J., Bourgoin, J.C.

Materials Research Society
9 国際会議録 Defects in thick epitaxial GaAs layers

Samic,H., Bourgoin,J.C.

Trans Tech Publications
4 国際会議録 EPR OBSERVATION OF THE ARSENIC ANTISITE-ARSENIC VACANCY COMPLEX.

BARDELEBEN,H.J.von, MIRET,A., BOURGOIN,J.C.

Trans Tech Publications
10 国際会議録 Detection and identification of the EL2 metastable state in GaAs

Bourgoin,J.C.

Trans Tech Publications
5 国際会議録 POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY

Bourgoin, J. C., von Bardeleben, H. J., Lim, H., Stievenard, D.

Materials Research Society
11 国際会議録 Defects in As-Prepared and Thermally Oxydized Porous Silicon

Bardeleben,H.J.von, Grosman,A., Morazzani,V., Ortega,C., Siejka,J.

Trans Tech Publications
6 国際会議録 Energy levels associated with the metastable state of EL2

Stievenard,D., Delerue,C., Bremond,G., Guillot,G., Azoulay,R., Bardeleben,H.J.von, Bourgoin,J.C., Portal,J.C., Ranz,E.

Trans Tech Publications
12 国際会議録 CORRELATION OF THE 0.8 Ev EMISSION BAND WITH THE EL6 CENTER IN GaAs

Alaya, S., Zaidi, M.A., Marrakchi, G., Maaref, H., von Bardeleben, H.J., Bourgoin, J.C.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12