CHARACTERIZATION OF VACANCY DEFECTS IN As-GROWN AND ELECTRON IRRADIATED GaAs BY POSITRON ANNIHILATION.

CHARACTERIZATION OF VACANCY DEFECTS IN As-GROWN AND ELECTRON IRRADIATED GaAs BY POSITRON ANNIHILATION.

著者名:

掲載資料名:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

シリーズ名:

Materials science forum

シリーズ巻号:

10-12

発行年:

1986

巻:

Part1

開始ページ:

265

終了ページ:

270

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00019743
シリーズID:	PA00000012
会議名:	International Conference on Defects in Semiconductors - ICDS
回次:	14th
会議開催地:	Paris, France
会議開催年:	1986.08.18-1986.08.22

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