Blank Cover Image

NATURE AND GENERATION MECHANISM OF BUTTERFLY-TYPE INTRINSIC GETTERING CENTERS IN OXYGEN-FREE SILICON CRYSTALS.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part1
開始ページ:
145
終了ページ:
150
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

Ueda, O., Nauka, K., Lagowski, J., Gatos, H.C.

Materials Research Society

Gatos, H. C., Lagowski, J.

Materials Research Society

Nauka, K., Lagowski, J., Gatos, H. C.

Materials Research Society

8 テクニカルペーパー DEFECT INTERACTIONS IN GaAs SINGLE CRYSTALS

Gatos, H. C., Lagowski, J.

National Aeronautics and Space Administration

Nauka, K., Gatos, H. C., Lagowski, J.

North-Holland

Tice, W.K., Tan, T.Y.

North Holland

Nauka, K., Walukiewicz, W., Lagowski, J., Gatos, H. C.

Materials Research Society

10 国際会議録 Space Charge Layers

Gatos C. H., Lagowski Jacek

Noordhoof International Publishing

Sun, Q., Lagowski, J., Gatos, H. C.

Materials Research Society

Skowronski, M., Lin, D. G., Lagowski, J., Pawlowicz, L..M., Ko, K. Y., Gatos, H. C.

Materials Research Society

Gatos, H.C.

National Aeronautics and Space Administration

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12