Blank Cover Image

Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)

著者名:
Razeghi,M. ( Northwestern Univ.(USA) )
Zhang,X. ( Northwestern Univ.(USA) )
Kung,P. ( Northwestern Univ.(USA) )
Saxier,A. ( Northwestern Univ.(USA) )
Walker,D. ( Northwestern Univ.(USA) )
Lim,K. Y. ( Jeonbuk National Univ.(Korea) )
Kim,K. S. ( Jeonbuk National Univ.(Korea) )
さらに 2 件
掲載資料名:
Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3179
発行年:
1997
開始ページ:
2
終了ページ:
11
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426055 [0819426059]
言語:
英語
請求記号:
P63600/3179
資料種別:
国際会議録

類似資料:

1 国際会議録 New Developments in III-Nitride Material and Device Applications

Razeghi,M., Saxler,A., Kung,P., Walker,D., Zhang,X., Kim,K.S., Vydyanath,H.R., Solomon,J., Ahoujja,M., Mitchel,W.C.

Narosa Publishing House
7 国際会議録 GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

Kung,P., Zhang,X., Walker,D., Saxler,A., Razeghi,M.

SPIE-The International Society for Optical Engineering
2 国際会議録 AlxGa1-xN-Based Materials and Heterostructures

Kung, P., Saxler, A., Walker, D., Zhang, X., Lavado, R., Kim, K. S., Razeghi, M.

MRS - Materials Research Society
8 国際会議録 Growth of GaN Without Yellow Luminescence

Zhang, X., Kung, P., Walker, D., Saxler, A., Razeghi, M.

MRS - Materials Research Society
3 国際会議録 Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

Saxler,A., Kim,K.S., Walker,D., Kung,P., Zhang,X., Brown,G.J., Mitchel,W.C., Razeghi,M.

Trans Tech Publications
9 国際会議録 ZnO thin film templates for GaN-based devices (Invited Paper)

Rogers, D.J., Teherani, F.Hosseini, Yasan, A., McClintock, R.P., Mayes, K., Darvish, S.R., Kung, P., Razeghi, M., Garry, …

SPIE - The International Society of Optical Engineering
4 国際会議録 GaN doped with sulphur

Saxier,A., Kung,P., Zhang,X., Walker,D., Soiomon,J., Ahoujja,M., Mitchel,W.C., Vydyanath,H.R., Razeghi,M.

Trans Tech Publications
10 国際会議録 Fabrication of GaN nanotubular material using MOCVD with aluminum oxide membrane (Invited Paper) [6127-21]

Jung, W. G., Jung, S. H., Kung, P., Razeghi, M.

SPIE - The International Society of Optical Engineering
5 国際会議録 Future of Alx Ga1-x N materials and device technology for ultraviolet photodetectors (Invited Paper)

Kung, P., Yasan, A., McClintock, R., Darvish, S., Mi, K., Razeghi, M.

SPIE-The International Society for Optical Engineering
11 国際会議録 GaN,GaAIN,and AIN for use in UV detectors for astrophysics:an update

Kung,P., Saxler,A., Zhang,X., Walker,D., Razeghi,M., Ulmer,M.P.

SPIE-The International Society for Optical Engineering
6 国際会議録 Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition (Invited Paper)

Razeghi,M., Saxler,A., Kung,P., Walker,D., Zhang,X., Rybaltowski,A., Xiao,Y., Yi,H.J., Diaz,J.

SPIE-The International Society for Optical Engineering
12 国際会議録 High-Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

Saxler, A., Capano, M. A., Mitchel, W. C., Kung, P., Zhang, X., Walker, D., Razeghi, M.

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12