Phosphorous-outgassing-induced threshold voltage in p-channel power MOSFET devices
- 著者名:
Lin,F. ( Motorola ) De Souza,R. ( Motorola ) Dynes,R. ( Motorola ) Lu,S. ( Chemical and Surface Analytical Labs. ) Schay,P. ( Motorola ) Grizzard,L. ( Motorola ) Plutino,T. ( Motorola ) Welches,D. ( Motorola ) - 掲載資料名:
- In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II :23-24 September 1998 Santa Clara, California
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3509
- 発行年:
- 1998
- 開始ページ:
- 154
- 終了ページ:
- 161
- 出版情報:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780081942963 [0081942968]
- 言語:
- 英語
- 請求記号:
- P63600/3509
- 資料種別:
- 国際会議録
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